| 摘要 |
PURPOSE:To contrive the improvement of the luminous efficiency and heat radiating characteristic, by forming cathode electrodes in a constitution of electric connection on an Si substrate via wiring layers. CONSTITUTION:A sub mount 2 constituted of the Si substrate 22 is connected to the upper surface of a stem 1 with good thermal conductivity. On the upper surface of the sub mount 2, the insulating film 3 constituted of a spot-formed cathode insulating film 20 and of an anode insulating film 21 which surrounds the film 20 in non-contact is provided. A cathode wiring layer 24 on the film 20 contacts the Si substrate 22 and is in a conduction state with the Si substrate. To improve the ohmic property with the wiring layer 24, a high density impurity diffused layer 25 is previously provided on the upper surface of the Si substrate 22. On the other hand, on the lower surface of a light emitting element 5, a cathode electrode 14 and an anode electrode 15 are provided, and the electrode 14 is joined to the wiring layer 24 resulting in the conduction state with the stem 1. The electrode 15 is connected to an anode wiring layer 23. In this constitution, the current flows uniformly to the entire circumference of the P-N junction, the luminous efficiency improves, and the thermal resistance can be reduced. |
