| 发明名称 |
Photovoltaic semiconductor device. |
| 摘要 |
<p>A hydrogenated amorphous silicon PIN semiconductor device of hybrid construction has its p-layer (16) deposited by reactive sputtering. Such a hybrid construction is of advantage in providing an ability to control the optical band gap of the p and n-layers resulting in increased photogeneration of charge carriers and device output.</p> |
| 申请公布号 |
EP0077601(A2) |
申请公布日期 |
1983.04.27 |
| 申请号 |
EP19820303096 |
申请日期 |
1982.06.15 |
| 申请人 |
EXXON RESEARCH AND ENGINEERING COMPANY |
发明人 |
MOUSTAKAS, THEODORE DEMETRI;ABELES, BENJAMIN;MOREL, DON LOUIS |
| 分类号 |
H01L31/04;H01L31/075;H01L31/20;(IPC1-7):01L31/18;01L31/02;01L31/06 |
主分类号 |
H01L31/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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