Method for the production of layers of high melting metals at low substrate temperatures.,申请号EP19820109524-传众专利搜索

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发明名称	Method for the production of layers of high melting metals at low substrate temperatures.
摘要	Die Erfindung betrifft ein Verfahren zum Herstellen von aus hochschmelzenden Metallen bestehenden Schichten durch thermische Zersetzung und Reduktion aus der Gasphase bei niedrigen Temperaturen. Dabei werden die gasförmigen Ausgangsverbindungen (AB, CD) so gewählt, daß eine hohe Bindungsaffinität der Komponente C der Verbindung CD zur Komponente B der Metallverbindung AB (A = Metall) besteht, so daß die Zersetzung und Abscheidung gemäß der Reaktion ABgas + CDgas → Afest + BCgas + Dgas erfolgt. Das Verfahren findet Verwendung in der Dünnschicht- und Halbleitertechnik, sowie zum Vergüten von Werkstücken.
申请公布号	EP0077535(A1)	申请公布日期	1983.04.27
申请号	EP19820109524	申请日期	1982.10.14
申请人	SIEMENS AKTIENGESELLSCHAFT	发明人	WIECZOREK, CLAUDIA, ING. GRAD.
分类号	C23C16/00;C23C16/08;H01L21/285;H01L21/3205;(IPC1-7):C23C11/02;H01C17/20;H01G1/01;H01L21/28;C23F11/00	主分类号	C23C16/00
代理机构		代理人
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