| 摘要 |
<p>PURPOSE:To avoid the electrostatic breakdown of an active element by providing protective transistors for conducting a static electricity with an earthline on a gate line and a drain line. CONSTITUTION:In a first protective thin film transistor (TFT) 1 and a second protecting TFT 2, their gate electrodes and drain electrodes are both used as gate electrodes, and source electrodes are connected to an earth line E. Accordingly, when a high voltage, such as a static electricity is applied to a scanning line X and a signal line Y, the TFT 1 and the TFT 2 are turned ON to be conducted with the line E, aud the thin film transistors TFT are protected as active elements. In this case, the transistors TFT are turned ON with signal voltage VD=10V and its signal current Id=approx. 100muA, and its leakage resistance is approx. 10<5> ohms. Since the fanout of a driver LVS or LHS is normally 100 muA or more, it does not an obstacle for transmitting a signal.</p> |
