发明名称 EPOXY RESIN COMPOSITION FOR SEALING SEMICONDUCTOR ELEMENT
摘要 <p>PURPOSE:To improve the reverse characteristics of a diode and a thyristor and a reverse bias applying degradation characteristic by making inorganic fillers to be contained to epoxy resin, a molecule thereof has at least one epoxy group, and an organic dibasic acid anhydride by 50-80wt%. CONSTITUTION:Triphenyl phosphite is used as an accelerator, and dimethylaminomethylphenol, dimethylaminoethylphenol, dimethylaminomethylbenzene and their derivatives are employed as aromatic tertiary amines shown in the general formulaI. 3- Dimethylaminoethylamine, 3-dimethylaminopropylamine, etc. are used as fatty tertiary amines shown in the general formula II. Not less than two kinds substances are jointly used as the accelerator as required, and it is preferable that the quantity of addition is 0.5-6wt% to the organic dibasic acid anhydride in consideration of time used and the balance of hardenability. A coloring agent, a coupling agent, a fire retardant, etc. may be added as necessary. In the formulaI, R1 represents alkylene group, R2, R3 alkyl group or hydrogen, R4 hydrogen, alkyl group or hydroxyl group, and R2, R3 and R4 may be the same or differ to each other. In the formula II, R1, R2, and R3 represent alkylene groups, and these groups may be the same or differ to each other.</p>
申请公布号 JPS5867051(A) 申请公布日期 1983.04.21
申请号 JP19810166033 申请日期 1981.10.16
申请人 HITACHI KASEI KOGYO KK 发明人 FUJITA KIMIHIDE
分类号 C08G59/00;C08G59/56;H01L23/29;H01L23/31 主分类号 C08G59/00
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