| 摘要 |
PURPOSE:To reduce the light absorption in a substrate, by providing a hole on the exposed surface of an N type conductive layer which is parallel with a P-N junction surface. CONSTITUTION:The numeral 10 represents a semiconductor substrate constituted of a P layer 10 P and an N layer 10 N and said both layers form a junction at the junction surface x. Wall surfaces of holes 10S, 10S formed at the central part on the N layer side of the semiconductor substrate 10 by an etching method, etc. are formed into mirror surfaces by using an appropriate etchant. Electrodes 11 is provided on the exposed surface of the P layer of the semiconductor substrate 10, and an electrode 12 on the exposed surface of the N layer. Since the thickness of the semiconductor substrate 10 is reduced (h'') at the point of holes 10S and 10S', the rate of the absorbed inside of the total luminous amount is reduced by that rate. |
