Device for high-rate atomization using the plasmatron principle

摘要

The invention relates to a device for high-rate atomization using the plasmatron principle in order to deposit layers in all fields of technology. The aim is to reduce the outlay on targets and the coating costs. The object consists in increasing the target utilisation factor and the rate of coating, as well as the target useful life. According to the invention, a device which generates a magnetic field is arranged with a self-enclosed annular gap in a tubular target. The anode surrounds the target except for the region of the annular gap, and its distance from the target can be adjusted. A drive is used to produce a relative movement between the target and the device generating a magnetic field. The distance between the target and the device generating the magnetic field is readjusted. <IMAGE>