| 摘要 |
PURPOSE:To contrive higher integration free of short-circuiting between collector and emitter by a method wherein an insulating film is attached to the side of an electrode made of a high melt point metal on a base layer whereinto an impurity of the reverse conductivity type is introduced for the formation of an emitter layer. CONSTITUTION:An N epitaxial layer 2 on a P type Si substrate 1 is isolated by a P layer 6 and an N<+> collector bonding layer 7 is provided. A process follows wherein a P base 31 is provided with an SiO2 layer 5 serving as a mask. The entire surface is then coated with a lamination of a TiPt or TiPd film 32 and an Au film 33, whereafter the Au film 33 is exposed to an ion beam with a PSG film 34 serving as a mask for the provision of a vertical opening and then the alloy film 32 is subjected to selective etching. Another coating of a PSG film 36 is provided with the thickness T thereof larger than the total T1 of those of the films 32, 33, 34. A part of the PSG film 36 remains inside when an opening 35 is provided therein by responsive sputter etching. Next, a poly Si layer 37 forms a coating wherethrough As ions are implanted for the building of an emitter 38, which is followed by an annealing process and the building of Al wirings 39, 40 and an electrode 37. A device thus constructed resembles a walled- emitter structure and is free of short-circuiting between collector and emitter, ensuring a miniaturized base area and higher integration.
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