发明名称 |
Semiconductor device having a fuse element. |
摘要 |
A fuse element is formed on a field insulation film on a semiconductor substrate of n conductivity type in which MOS transistors are formed. A first guard ring region of second conductivity type is provided in the substrate, surrounding the semiconductor substrate region under the fuse element. A second guard ring region of first conductivity type is formed in the substrate, surrounding the first guard ring region. Proper potentials are applied to the first and second guard ring regions. |
申请公布号 |
EP0076967(A2) |
申请公布日期 |
1983.04.20 |
申请号 |
EP19820108975 |
申请日期 |
1982.09.28 |
申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
UCHIDA, YUKIMASA |
分类号 |
H01L23/525;H01L29/06;(IPC1-7):01L23/52;01L29/06 |
主分类号 |
H01L23/525 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|