| 摘要 |
PURPOSE:To make >=35dB isolation possible in a magnetooptic element consisting of a magnetic film garnet grown epitaxially on a non-magnetic garnet substrate, by making light incident to the garnet film in parallel with the growing direction of the substrate. CONSTITUTION:A Gd3Ga5O12 single crystal bar 1 is taken up by a Czochoralski method with[001]as a growing direction, and a bar 2 of which the axis is [110]is cut out from the bar 1. From said bar, a substrate wherein the direction normal to the substrate plane is inclined by 3 deg. in the direction[1-10]within (110) facets from[110]is cutout. A Gd0.2Y2.8Fe5O12 garnet film is grown on said substrate to 140mum by a liquid phase epitaxial method. A chip enclosed by <100> and the <110> projected in the facets is cut out from such wafer and is used as a Faraday rotating body. If light is made incident to the <100> parallel with the taking direction of the single crystal 1, >=35dB isolation is obtained. |
