Integrated semi-conductor memory

摘要

The invention relates to an integrated, dynamic semi-conductor memory having memory cells which in each case comprise an MIS transistor with a substrate region at floating potential. The substrate region is charged information-dependently by a charge pumping pulse, thereby shifting the turn-on voltage of the MIS transistor. The aim is for a good mutual insulation of the memory cells and simple production of the semi-conductor memory. For this purpose, according to the invention a base substrate (10) of a monolithic semi-conductor body is provided, which contains the substrate regions (5) of the memory cells as superficial subregions, there being provided underneath each substrate region (5) a semi-conductor region (8) connecting the source region (2) to the drain region (3) of the assigned MIS transistor, which semi-conductor region is of the same conduction type as the source region (2) and drain region (3). The field of application comprises dynamic semi-conductor memories of high packing density. <IMAGE>