| 摘要 |
PURPOSE:To avoid introduction of damage or defect to a semiconductor element by connecting a lead wire to the extension on an electrode supporting substrate in the structure of the element having remarkably brittle mechanical strength of a semiconductor layer such as an infrared ray detector, thereby reducing the thickness of the lead wire leading electrode. CONSTITUTION:An electrode 4 is provided onto a silicon substrate 1, and a lead wire 6 is bonded and led at the part on the substrate of the electrode 4. In this case, the pressure by the bonding is applied to the substrate 1, but is not affected to mercury cadmium tellurium 3. Accordingly, the thickness of the electrode 4 is sufficient in 1mum, and there is no danger of deteriorating the characteristics of the element. |
