| 摘要 |
PURPOSE:To perform the dry etching efficiently as figure etching after coating solid surface with resist without batch processing of exposure, development and fixing etc. by a method wherein image forming light is radiated in figure on solid surface. CONSTITUTION:The light from Xe or He-Hg lamp 1 of around 2KW is radiated on mask 5 as parallel lights through mirrors 2, 3 and fly eye lens 4 further forming image of mask figure on Si3N4 film and polycrystal Si film formed on Si 8 provided in quartz reaction tube 7 through image forming optical lens 6 introducing Cl2 gas into quartz tube 7 to hold the pressure of 200Torr in the tube. The polycrystal Si may be etched into figure at the etching speed of around 0.3 micron minute utilizing Si3N4 film as etching stopping material by means of radiating the image forming light on the polycrystal Si film and exposing Cl2 gas. |
