| 发明名称 |
COMPOSITE CONDUCTOR STRUCTURE FOR A SEMICONDUCTOR DEVICE |
| 摘要 |
The compounds TiSi2 and TaSi2 have been found to be suitable substitutes for polysilicon layers in semiconductor integrated circuits. Suitable conducting properties of the compounds are ensured by providing a relatively thin substrate of polysilicon. |
| 申请公布号 |
GB2038552(B) |
申请公布日期 |
1983.04.13 |
| 申请号 |
GB19790042992 |
申请日期 |
1979.12.13 |
| 申请人 |
WE |
发明人 |
|
| 分类号 |
H01B1/00;H01B1/06;H01L21/28;H01L21/3205;H01L21/768;H01L23/52;H01L23/532;H01L29/49;(IPC1-7):01L29/62 |
主分类号 |
H01B1/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
