| 摘要 |
PURPOSE:To obtain substrates suitable for a semiconductor device having high integration and to operate at a high speed by a method wherein components element of conductor layers intending to be deposite are made in gaseous state and in plasma condition, and are made to be deposited on wafers at the low temperature of 600 deg.C or less. CONSTITUTION:A coil electrode 2 for generation of plasma connected to a high frequency electric power source 3 is wound around the outside circumference on the outlet B side of a reaction tube 1 manufactured with quartz provided with an inlet A for mixed gas at one end and the outlet B to be connected to a rotary pump at another end, and a heater 4 is wound around the outside circumference on the outlet B side in the rear stage thereof. Then the wafers 5 of a large number disposed in upright interposing an interval between them are accommodated on a holder put at the position in the reaction tube 1 thereof corresponding to the heater 4, and in the case when the conductor layer to be deposited on the surface of the wafer 5 is Mo containing P, MoCl5 sublimated by heating at 150-250 deg.C, H2 carrier gas and PH3 are flowed therein diluting with N2. Moreover in the case when the conductor layer is MoSi2, SiH4 is mixed in addition, and deposition on the surfaces of the wafers 5 is performed holding pressure at 0.1-10Torr in both the cases. |
