| 摘要 |
PURPOSE:To inhibit signal charges generated at an inner part of a substrate from flowing in, and to improve picture quality, by surrounding an n<+> type buried diffusion layer, constituting a CCD, with a p<-> type diffusion layer, and further surrounding part of the p<-> type diffusion layer with a p<+> type diffusion layer. CONSTITUTION:On a surface of a p type substrate 21, sensor parts 22 are arranged in two dimensions, and an n<+> type buried channel diffusion layer 23 constituting part of a vertical transfer CCD is provided adjacently to the sensor parts 22. A p<-> type diffusion layer 26 is provided at the circumference of the layer 23 and part of the layer 26 except a part facing the sensor parts 2 is surrounded with a p<+> type diffusion area 27. The diffusion layer 23 is provided with a vertical transfer electrode 24, and on the substrate 21, a shift gate 25 is provided between the sensor part 22 and layer 23. Consequently, signal charges generated at an inner part of the p type substrate 21 are stopped by the p<+> type diffusion layer 27 and never reach the layer 23, reducing the amount of smear on a screen. |
