| 摘要 |
PURPOSE:To enable to freely control the distance between the effective gate junction part and the high density ion implanted layer of the titled transistor by a method wherein, after the high density ion implanted layer has been formed using a resist mask of multilayer construction, insulating films are formed and a gate electrode is provided between the insulating films. CONSTITUTION:A triple layer resist, consisting of a primary ion-implanted layer 13, a silicon nitride film 14, a resist 15, an insulating film 16 and a resist 17, is formed on the substrate 12 consisting of high-resistance gallium arsenic, and a high-density ion implanted layer 18 is formed using said triple-layer resist as a mask. Then, after SiO2 film has been deposited, an SiO2 film 19 is formed on the silicon nitride film 14 by removing the triple-layer resist. A heat treat- ment is performed to activate the ion-implanted lyaer 18, and after the part corresponding to the region where source anddrain electrodes will be formed, either of the SiO2 film 19 and the silicon nitride film 14, a source electrode 20 and a drain electrode 21 are formed. Then, a gate electrode 22 is formed at the section located between the SiO2 films 19. |
