| 摘要 |
<p>The invention provides a stacked semiconductor device having a plurality of monocrystalline semiconductor films (32a, 32b, 32c) of the same material which are formed on a monocrystalline semiconductor substrate (30) and between which insulating films (31a, 31b, 31c) are sandwiched wherein the semiconductor device comprises at least one connecting region (33), and wherein the semiconductor substrate (30) and the semiconductor films (32a, 32b, 32c) are vertically connected at the one connecting region (33).</p> |
