| 摘要 |
PURPOSE:To stabilize the output of a magneto-resistance effect element, by connecting a conductive film connected to said effect element to a magnetic bias thin film of high coercive force. CONSTITUTION:A magnetic bias thin film 3 of high coercive force is formed by a sputtering process on a ferrite substrate 1 via an insulated layer 2 of SiO2. Then an insulated film 4 of SiO2, etc. is coated over the film 3 by a sputtering process. A ''Permalloy '' film 5 serving as an MR element (magneto- resistance effect element) part is vapor-deposited under vacuum in a magnetic field, and a chemical etching is carried out to obtain a desired pattern. A hole 9 is drilled to a part of the layer 4 by a plasma etching process, and an Al- Cu conductive material layer 6 is formed by a sputtering process and then formed into a pattern by a plasma etching process. The film 6 is in contact with a Co-P film 3 via the hole 9. An SiO2 film 7 is formed to be used as a passivation layer at the MR element part, and ''Permalloy '' is coated to obtain a magnetic shielding layer 8. |
