| 摘要 |
PURPOSE:To decrease the current consumption for a memory cell which contains the load resistance elements of polysilicon, by adding a current limiter having its resistance value increasing with the rise of temperature to the memory cell at the power supply side. CONSTITUTION:For an MOS type static RAM, the resistance value lowers at a high temperature for the load resistance elements R1 and R2 to increase the current consumption. Thus a depression type MOS transistor TRT11 is set between a memory cell and a supply terminal in order to compensate the above- mentioned current consumption. The resistance value of the TRT11 increases with the rise of the temperatue, and accordingly the TRT11 functions as a constant current limiter. Thus the current consumption is decreased. |
