| 摘要 |
PURPOSE:To eliminate the influence of dopant and to obtain good ohmic contact by a method wherein an amorphous silicon layer increased conductivity by raising silane gas pressure at the time of manufacturing a film is inserted in the interface between metal and a non-doped layer. CONSTITUTION:A semi-transparent metal electrode 2 is vaporized on a substrate 1. Next, an amorphous silicon layer 3 is formed by the aid of a plasma CVD device to obtain good ohmic contact. Furthermore, an amorphous layer 4 is formed under silane gas pressure and an amorphous silicon layer 5 is formed on the layer 4 under silane gas pressure to obtain ohmic contact again. Finally, an upper metal electrode 6 is vaporized. In order to irradiate light at this element, light is aimed from the glass substrate side 1 through the arrow X direction. With a suitable voltage applied across the electrodes 2-6 and with light irradiated, film resistance is decreased to flow a photocurrent. |
