| 摘要 |
PURPOSE:To improve the acceleration and the reliability of the operation of a semiconductor integrated circuit device by forming as a low resistance backing material of a polycrystalline silicon film forming the gate material or wirings of a polycrystalline silicon gate MOS transistor (MOSTr). CONSTITUTION:Bit wirings 209 formed of the first aluminum wirings pass through the first interlayer insulating film 208 on word wirings 206 and capacity plate 205 formed of polycrystalline silicon film, and are coupled to a source and drain region 207 made of an n<+> type diffused layer. Further, the backing second aluminum wirings 211 are formed through the second interlayer insulating film 210 thereon. The wirings 211 are connected through the wirings 209 to the wirings 206. |
