发明名称 |
Method for producing mixed crystal wafer using special temperature control for preliminary gradient and constant layer deposition suitable for fabricating light-emitting diode |
摘要 |
A method of manufacturing a mixed crystal compound semiconductor wafer suitable for the production of LED having a high light output. Upon a monocrystalline substrate of III-V semiconductor material a base layer is epitaxially grown of the same material as the substrate. An initial gradient layer is grown on the base layer having a mixed crystal ratio varying continuously from that of the base layer to a first value at a constant temperature. A combination sublayer is grown on the initial gradient sublayer which includes at least one constant sublayer having a constant crystal mixture ratio and at least one gradient sublayer having a crystal mixture ratio varying continuously between the mixed crystal ratios of its adjacent constant layers.
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申请公布号 |
US4378259(A) |
申请公布日期 |
1983.03.29 |
申请号 |
US19800219722 |
申请日期 |
1980.12.24 |
申请人 |
MITSUBISHI MONSANTO CHEMICAL CO. |
发明人 |
HASEGAWA, SHINICHI;FUJITA, HISANORI |
分类号 |
H01L21/205;H01L29/205;H01L33/30;H01L33/34;(IPC1-7):H01L21/20;H01L21/32 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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