| 摘要 |
1,236,054. Semi-conductor devices. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 4 Oct., 1968 [7 Oct., 1967], No. 47135/68. Heading H1K In a method of manufacturing a semiconductor device comprising a semi-conductor body in which there is a transistor T, having emitter 2, base 3 and collector regions 4 extending to one surface of the body, after the steps of forming a diffusion masking layer 5 on this surface, providing a base diffusion window 15 in this layer, diffusing the base impurity through the window, closing the window with a further masking layer, forming a smaller, emitter diffusion window in this layer and diffusing the emitter impurity through it, the base diffusion window 15 is reopened substantially entirely and the exposed semiconductor surface is provided with a new insulating layer 12 in which apertures 6, 7 are formed to allow contact to be made to the emitter and base regions. The diffusion masking layers and the new insulating layers may be of silicon oxide or silicon nitride, and the new insulating layers, which may be provided with a surface layer of phosphorus glass to promote stability of the device, are provided by thermal oxidation, or where a very thin emitter region is required, pyrolytically or by sputtering. This process can be applied to other windows 17, 18, 37, which have been formed elsewhere on the semi-conductor body during the formation of the emitter diffusion window, as in the case where the method is applied to integrated circuits. Conductors of aluminium may be deposited over the insulating layers from the vapour phase. Silicon is used as the semiconductor material, doped with boron and phosphorus as required. |
