| 发明名称 |
Etching polyimide resin layers and method of manufacturing a semiconductor device having a layer of polyimide resin. |
| 摘要 |
<p>The susceptibility to etching of a polyimide resin layer is controlled by implanting ions into the layer. A high close of implanted ions, for example 1 x 10<1><4> cm<-><2> substantially prevents etching.</p> |
| 申请公布号 |
EP0074845(A2) |
申请公布日期 |
1983.03.23 |
| 申请号 |
EP19820304831 |
申请日期 |
1982.09.14 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
UCHIYAMA, NOBUHIRO C/O FUJITSU LIMITED;SHINGU, MASATAKA C/O FUJITSU LIMITED;TSUKADA, SABURO C/O FUJITSU LIMITED |
| 分类号 |
H01L21/768;C09K13/00;H01L21/311;H01L21/312;H01L23/522;(IPC1-7):01L21/32;09K13/02 |
主分类号 |
H01L21/768 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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