| 摘要 |
PURPOSE:To eliminate restriction resulting from domain size of plarization by introducing thin films for all elements comprising ferro-dielectric material, realize micro-dimensions of elements by simplifying the structure and to improve inversion speed of polarization by vertically applying a write voltage to the film surface. CONSTITUTION:The write electrode 4, ferro-dielectric thin film 1b, semiconductor thin film 2a, insulating thin film 10 and write electrode 4 are laminated on the insulating substrate 9 and the read electrode 5 is provided at both ends of semiconductor thin film 2a. A conductivity between the read electrodes 5 is determined in accordance with charge density in the semiconductor thin film 2a and polarity thereof. When the semiconductor thin film is n type, it becomes conductive for minus charge but non-conductive for plus charge. In addition, an insulating thin film 10 is inserted between the semiconductor thin film 2a and write electrode 4 in order to prevent change of conductivity, namely drop of read output signal. A memory element is formed into the 2-terminal structure and further the structure of memory plane composed of the word lines and bit lines is simplified. Thereby, high integration density is realized and operation speed as the memory plane can be improved. |
