| 摘要 |
PURPOSE:To provide epitaxial growth layer with little lattice defect, by a method wherein in opposition to the substrate crystal of growing crystal is installed a cover of similar semiconductor, and metal being liquid state at a high temperature is adhered to the cover. CONSTITUTION:If temperature of 700 deg.C is held for about one hour, tin layer 6 adhered to a cover 5 is melted to liquid state, and InP in the cover 5 is melted into the tin and saturated. Phosphorus is liberated out of the tin solution including InP melted therein and the vapor pressure is much higher than InP vapor pressure in solid state at the same temperature. Therefore between the substrate crystal 4 and the cover 5 is filled with phosphorous vapor and liberation of phosphorus does not occur at InP to constitute the substrate crystal 4. If melt 3 (solution of In including InP and various impurities melted therein) attains equilibrium and then the temperature is decreased and a melt vessel 2 (made of carbon) is transferred onto a slider 1 (made of carbon) in arrow direction, the cover 5 is removed automatically and the melt 3 is coated onto the substrate crystal 4. As the temperature is decreased, crystal of thin film is grown in epitaxial state onto the substrate crystal 4. |
