| 摘要 |
PURPOSE:To sufficiently reduce the resistance of a well formed under a transistor and to eliminate the influence to the characteristics of a field-effect transistor formed on the well by forming the well in a 2-layer structure and to reduce the resistance of the well of the lower layer. CONSTITUTION:It is composed of a silicon substrate 1, a high density impurity well 2, a well 3, well potential fixing diffused regions 4, 6 and impurity regions 5, 7 for forming a field effect transistor, a gate 8, an output terminal 9 and an input terminal 10. Here, the well 2 is enhanced in its impurity density to reduce its resistance. The type of the impurity therein may be any if the same as the well 3. The wells 2, 3 are formed by two or more times of diffusions. |
