| 摘要 |
PURPOSE:To obtain a wiring layer in which Si is not precipitated even in the heating step by foring an electrode wiring layer which is ohmically contacted with an Si substrate of Al or Al alloy which is interposed with a metallic nitrided layer selected from a group consisting of Ta, W, Hf, Mo, Zr, Nb, V and Cr when forming the electrode wiring layer. CONSTITUTION:An insulating layer 2 which is formed of an SiO2 or PSG is covered on an Si substrate 1, a contacting window is opened, and electrode wirings 4 which are contacted with the substrate 1 are covered on the film 2 while extending. At this time, the electrode wirings 4 are formed of a layer 5 made of Al or Al alloy, an intermediate layer 16 disposed on the layer 5, and a layer 7 which is formed of Al or Al alloy. The layer 16 may employ a metal nitrided layer selected from a group consisting of T, Ta, W, Hf, Mo, Zr, Nb, V and Cr instead of TiW being used conventionally.This nitride does not form an alloy with the Si nor react with Al. Accordingly, the Si is not precipitated in the layer 4. |
