| 摘要 |
PURPOSE:To improve the increase of reverse bias leakage currents and the decrease of reverse withstand voltages of a diode, by making a silicone dioxide exist on a region wherein a P-N junction plane and an Si-sapphire interface are contacted. CONSTITUTION:A single crystal Si 22 is epitaxial-grown on a sapphire substrate 21 resulting in respective formations of a P type region 23 and N type regions 25, 26 by ion implantations of B ions and P ions. Next, as shown in fig. (f), oxygen ions are implanted so that the distribution of oxygen densities reach the peak in the neighborhood of the boundary between the N type diffused region 25 and the P type low density region 23 and in the neighborhood of the interface between the single crystal Si and the sapphire. Next, as shown in fig. (g), a resist 28 is removed, and a heat treatment is performed to form a silicone dioxide 29 by chemical reaction between this oxigen ions and the Si. Further, a CVD SiO2 30 is deposited, contact holes are formed, Al electrodes 31 are provided, and Al sintering is performed resulting in the completion of a semiconductor device by this invention. |
