发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 The semiconductor memory device has the multi memory cell array connected with word lines(w, w'). The emitter area of active devices(Q1, Q2 or Q3, Q4), which determine the supplement current in order to maintain the constant current in each memory cell, is changed and designed in each memory cell.
申请公布号 KR830000541(A) 申请公布日期 1983.03.12
申请号 KR19790003590 申请日期 1979.10.18
申请人 FUJITSU LTD 发明人 TOYODA KAZUHIRO
分类号 H01L27/06;(IPC1-7):H01L27/06 主分类号 H01L27/06
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