| 摘要 |
PURPOSE:To obtain a minute and highly accurate resist pattern by a method wherein a photoresist layer is formed after forming a heat resistant resin layer on a substrate and patterning is performed to obtain a predetermined pattern and after performing dry etching by using the resist pattern as a mask, the resist pattern is removed. CONSTITUTION:A metal thin film 5 such as silicon dioxide is formed on the whole surface of a silicon substrate 4 having good plane and after applying a polyimide resin as heat resistant resin on the film 5, a heat resistant resin layer 6 is formed by baking the polyimide resin. Positive-type photoresist is similarly rotated and applied on the layer 6 for baking and a photoresist layer 7 is obtained. Furthermore, light is irradiated at the layer 7 through a photo mask for printing. Next, a predetermined resist pattern is obtained by executing development. Furthermore, etching is performed to the layer 6 by using the resist pattern as a mask. |
