| 摘要 |
PURPOSE:To obtain easily a semiconductor device having high withstand voltage and high reliability by a method wherein the various regions are enabled to be formed by selfalignment without forming thick insulating films according to the selective oxidation method. CONSTITUTION:An insulating silicon oxide film 22 is formed on an n type silicon semiconductor layer 21 applying the thermal oxidation method. A phospho silicate glass film 23 is made to grow according to the thermal vapor phase growth method. A photo resist film 24 to cover the inside base formation programing part is formed, and patterning of the phospho silicate glass film 23 is performed using the resist film thereof as the mask. Ion implantation of p type impurity atoms is performed to form the high concentration outside base region 25. The photo resist film 24 is removed, and a photo resist film 26 is formed again. The photo resist film 26 is thinned to make the surface of the phospho silicate glass film 23 to be exposed, and ethcing of the phospho silicate glass film 23 and patterning of the insulating silicon dioxide film 22 positioning thereunder are performed. |
