| 摘要 |
PURPOSE:To decrease forbidden band width Eg gradually toward the depth direction of the surface of a semiconductor to which beams are irradiated, and to obtain a transducer having high efficiency by adding a substance, which can increase the Eg in proportional to the quantity of addition, into the semiconductor at the same time as the semiconductor is shaped. CONSTITUTION:CH4, NH3, H2O Are controlled in stoichiometric form while they can be mixed by forming a film through glow discharge by using the hydride or halide of Si. Lattice defect or unpaired bonds exist uniformly because a grown film is made of a non-single crystal, the film is neutralized by the halide,and a union as Si-C-Si is shaped to the addition of C, N or O. Accordingly, the transducer having the maximum efficiency to the irradiation of beams of a continuous spectrum is obtained by forming wide-narrow band structure changing up to 0.7eV from the optimum 3eV to sunrays into the same semiconductor because additives and Si can be coupled without any limit and the Eg can continuously controlled arbitrarily only by changing the quantity of the additives. |
