| 摘要 |
PURPOSE:To enable to manufacture a solar battery which has high efficiency, excellent radiation resistance, light weight and high mechanical strength with good yield by completing the bonding of crystalline plates of the prescribed thickness, formation of surface side electrode, and bonding of cover glass, etching the back surface to the crystal of the prescribed thickness. CONSTITUTION:An N type GaAs substrate 1 having a thickness of approx. 300mum is contacted with a 3-element compound semiconductor such as Ga and Al as well as As or GaAs molten liquid with zinc as crystalline growth liquid, so that Zn is diffused from the liquid into the substrate 1, with the result that the thickness of a P type GaAs layer 2 becomes the prescribed value and then the thickness of a P type AlxGa1-xAs layer 4 becomes less than 1mum. Then, a reflection preventive film Si3N4 film 7 is formed. Holes are opened at the films 7, 4, and a P type side electrode 6 which is made of gold-zinc that is ohmically contacted with the surface of the layer 2 through the holes is formed. Then, cover glass 8 of the thickness of 100-250mum is bonded to the surface of the film 7 via transparent silicone resin 9, the back surface of the substrate 1 is etched with the etchant of GaAs, and the thickness of the substrate 10 is reduced to approx. 50mum. Subsequently, an N type side electrode 5 is formed on the surface of the layer 1. |
