| 摘要 |
PURPOSE:To improve the manufacturing yield of a compound semiconductor element by suitably providing the length depending upon the size and the characteristics of the element, thereby preventing and suppressing the decrease in the withstand voltage due to the formation of P type of uncontrollable compound semiconductor element at the manufacturing time. CONSTITUTION:When the resistance of a semiconductor under an insulating film 9 determined by the length 10 and the specific resistance of semi-insulating semiconductor is sufficiently large even if the length 10 of an insulating film, the withstand voltage is not produced irrespective of the formation of a parasitic N-P-N transistor. Accordingly, when the length is suitably selected, the resistance of the semiconductor under the film 9 operates as the base resistance of the parasitic N-P-N transistor, and the resistance is prevented from becoming the ON state in the transistor under the withstand voltage of an FET. |
