| 摘要 |
PURPOSE:To obtain a chemical etching substance having no variance in its etching thickness, by soaking a substance to be etched into an etchant which has been set to a bubbling state by jetting gas through a lot of small holes, and executing the etching. CONSTITUTION:In an etching board 1 made of teflon, etc., scores of pieces of semiconductor substrates 2,... are installed in parallel at intervals of several millimeters in an erect state, and are soaked in an etchant 4 consisting of mixed acid of fluoric acid, nitric acid and acetic acid, etc. On the bottom part of a vessel 3 of the etchant 4, a gas jetting case 5 which has been formed by teflon, etc. and has countless small holes on the surface is provided, and air is fed from a gas feed pipe 6 and is jetted into the etchant 4 from said small holes, by which the etchant 4 is set to a bubbling state. When this state is continued for several minutes, said substrates 2... are subjected to uniform chemical etching. |
