| 摘要 |
PURPOSE:To reduce a blooming phenomenon and to improve picture quality without using any external compensating circuit, by providing a region within a semiconductor image pickup device to absorb the excess carrier before it is diffused to the contiguous photodetecting part. CONSTITUTION:An (n) type buried layer 5 is formed at the desired part on the surface of a (p) type silicone substrate 1 by a selective heat diffusion or an ion implantation process, and a (p) type epitaxial grown layer 6 of a prescribed thickness on the substrate 1 including the layer 5. Then an n<+> type epitaxial region 7 is formed to reach the layer 5 from the surface of the layer 6 by a selective heat diffusion process, and at the same time an SiO2 film 2 and (n) type regions 3a and 3b are formed on the surface of the layer 6. The regions 3a and 3b which serve as the 2nd conductive region plus the layer 6 which serves as the 1st conductive semiconductor layer are used as diodes. Then a backward voltage is applied to the p-n junction between the layers 6 and 5, and an excess carrier Q generated at the region 3a is absorbed to the layer 5. Thus the amount of injection of the carrier Q is reduced to the contiguous region 3b. In such way, the deterioration is prevented for the picture quality. |
