发明名称 |
Method for selectively etching integral cathode substrate and support |
摘要 |
In a method for preparing an integral cathode substrate and support in which selected surface portions of a formed metal part are masked, the unmasked surface portions etched, and then the mask removed, the improvement wherein the masking step is conducted by pressing surface portions of an etch-resistant, compressible sheet against the selected surface portions of the part.
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申请公布号 |
US4441957(A) |
申请公布日期 |
1984.04.10 |
申请号 |
US19800210246 |
申请日期 |
1980.11.25 |
申请人 |
RCA CORPORATION |
发明人 |
POFF, WAYNE R.;BARTCH, DONALD W. |
分类号 |
H01J9/04;C23F1/02;(IPC1-7):C23F1/02;H01L21/31 |
主分类号 |
H01J9/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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