发明名称 Method for selectively etching integral cathode substrate and support
摘要 In a method for preparing an integral cathode substrate and support in which selected surface portions of a formed metal part are masked, the unmasked surface portions etched, and then the mask removed, the improvement wherein the masking step is conducted by pressing surface portions of an etch-resistant, compressible sheet against the selected surface portions of the part.
申请公布号 US4441957(A) 申请公布日期 1984.04.10
申请号 US19800210246 申请日期 1980.11.25
申请人 RCA CORPORATION 发明人 POFF, WAYNE R.;BARTCH, DONALD W.
分类号 H01J9/04;C23F1/02;(IPC1-7):C23F1/02;H01L21/31 主分类号 H01J9/04
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