| 摘要 |
PURPOSE:To utilize the formed insulated layer as a blocking layer forming amorphous Si thereon reducing dark current and improving yield of photo-conductive elements by a method wherein the first electrode formed on the supporting substrate is oxidized or nitrified. CONSTITUTION:The n<+> type region 2 to be diode region, n type region 3 to be embedded type channel, read gate electrode 4 and transfer gate electrode 5 are provided on the P type Si substrate 1 and the region 2 only is opened with all the other 3, 4 and 5 are covered with the insulator 6. The first electrode 7 formed on the opending and the insulator 6 is oxidized or nitrified forming the insulator 8 comprizing AlN, Al2O3 or Si3N4, SiO2 etc. on the first electrode. This insulator 8 is utilized as a blocking layer to form the amorphous Si 9 thereon further forming the transparent electrode comprizing Indium. Tin. Oxide 10 thus reducing the dark current. |
