| 摘要 |
PURPOSE:When a crystal of compound semiconductor is made from substances whose vapor pressures are different, the vapor of the substance with higher vapor pressure is brought into contact with the melt of the other substance of lower vapor pressure to facilitate the production of high-purity crystals of compound semiconductor. CONSTITUTION:A quartz crucible 2 with an opening at the top is placed in a quartz vacuum vessel 1 at the upper part and the starting material of lower vapor pressure, e.g., Ga 3 for a compound semiconductor GaP, is charged in the crucible. The other higher vapor pressure material, red phosphorus 6, is placed in the bottom of the vessel 1 and the bottom is heated with electric furnace 4b at higher temperatures while the upper part, at lower. The Ga melts in the crucible 2 and P vaporizes from the bottom to come into contact with the melted surface of Ga 3a to form GaP. Gap diffuses through melted Ga 3 to precipitate at the low-temperature bottom of the crucible 2a as GaP crystals. Thus, GaP formed on the surface 3a of melted Ga grows as a single crystal or large- sized one. |
