| 摘要 |
PURPOSE:To allow simplifying processes, by appropriately choosing a baking temperature for a heat resisting resin layer and the ratio of film thicknesses between the heat resisting resin layer and a resist film and then removing the resist film at the finish of a desired etching of the heat resisting resin layer when dry etching shaping with the heat resisting resin layer on a base body as a resist mask for electron rays. CONSTITUTION:A metallic thin film 2 such as Al is formed in approx. 2,000Angstrom thick on the whole of the upper surface of an Si substrate 1 by an evaporation sputtering, etc., a polyimide resin as a heat resisting resin is applied thereon, and thus the heat resisting resin layer 3 is formed being baked in an N atmosphere. The thickness of the resin layer thereat is approx. 2.4mum. Next, a PMMA (polymethyl methacrylate) as a positive type electron ray resist is applied in approx. 2.4mum thereon, thus the resist layer 4 is formed being baked in an N atmosphere. Subsequently, electron beams are irradiated. Then, after developing, the heat resisting resin layer 4 is etched. Thereat, the heat resisting resin is simultaneously etched by an O2 gas because of being an organic substance as a resist. |
