发明名称 QUALITY DECIDING METHOD OF P-N JUNCTION SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To automatically decide a quality easily and exactly even in case of an element containing a slight defective structure, by deciding whether it is good or not, by the number of crests of a wave crest distribution of an optical current pulse, etc. by a P-N junction semiconductor element. CONSTITUTION:To a P-N junction semiconductor element 1 which has been cooled by liquid nitrogen, etc. in order to prevent influence of a thermal noise, an optical pulse for propagating an optical fiber, etc. is applied in a state that reverse bias voltage has been applied by a regulated power supply 10. An optical current pulse of the element 1, which is outputted in response to said operation is detected through a load resistance 13, etc., and a crest of a wave crest distribution of the optical current pulse is discriminated by a wave crest discriminator 15. Subsequently, a defective element whose number of crests of the wave crest distribution becomes plural by generating a microplasma by a fault of a lattice defect, etc. is decided through a counter for counting the number of crests, a plotter 17, etc., and a quality of the P-N junction semiconductor element containing a slight defective structure can be automatically decided easily and exactly. In this regard, even in case when a dark current pulse is an object, it is all the same as above.
申请公布号 JPS5822973(A) 申请公布日期 1983.02.10
申请号 JP19810121330 申请日期 1981.08.04
申请人 SHIMADA RIKA KOGYO KK 发明人 KITANI KEIICHI
分类号 G01R31/26;G01R31/265 主分类号 G01R31/26
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