SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE:To improve characteristics and reliability of semiconductor devices so much by forming a passivation film which comprises an inner layer formed of a low-pressure CVD oxidation film or a plasma CVD silicon nitride film and an outer surface layer formed of an aluminium nitride film. CONSTITUTION:A semiconductor substrate 1 is coated with any desirous insulative film 2, and an electrode wiring 3 of an Al film is formed. An LP (low pressure)-CVD VDO (oxidation) film is formed on the substrate 1 as an inner passivation layer 4. Aluminum and nitrogen are ion-implanted all over the layer 4 to form an ion implanted layer 6. Then, it is annealed at temperature of 300- 600 deg.C under the inactive atmosphere such as N2 to form a fine aluminium film 7 on the surface of the UDO film. This film 7 constitutes an outer surface layer of the passivation film.