| 摘要 |
PURPOSE:To easily increase wiring thickness and to reduce width to contrive the high integration of a device by a method wherein thick metal wiring is stacked on the metal wiring on a region having large current capacity and thin metal wiring is simultaneously provided on a region having small current capacity. CONSTITUTION:Al power wiring 8 having large current capacity is made on SiO2 5 on an Si substrate 4 and the whole surface is covered with the second Al 9. The Al 9 is etched and other signal wiring pattern 11 having small current capacity is also formed. The power wiring is piled Al 8 and 10 and thick and stroke width can be reduced as current capacity per unit width increases. The Al wiring 11 and the circumference of the power wiring are same and while maintaining the wiring 11 having small current capacity with a fine pattern as usual, only the wiring having large current capacity is formed with n times film thickness to form width as 1/n and chip size can be reduced. |
