| 摘要 |
PURPOSE:To improve the integrated degree in the horizontal direction and to highly integrate the titled solid image pickup device, by installing vertically an overflow drain which discharges excessive electric charges of the picture element between adjacent picture elements. CONSTITUTION:On a semiconductor substrate of a solid image pickup device of the interlace transfer system, plural island type picture elements 2 are arranged in a matrix wise, and vertical shift registers 3 which transfer the signal from the picture element 2 are installed in the space between each of two picture element rows of the photosensitive section. Moreover, a horizontal shift register 4 which takes out the electric charge from the register 3 as the image pickup output by transferring the electric charge at every horizontal scanning is installed. Furthermore, overflow drains 5 and overflow drain control gates 6 are installed as islands in the space between vertically adjacent picture elements 21 and 22 of each picture element 2. The inflow of excess electric charges from each picture element 2 into the drain 5 is controlled at the gate 6 and the integrated degree in the horizontal direction is improved, and thus the image pickup device is highly integrated. |
