| 摘要 |
PURPOSE:To obtain a stem of good productivity inexpensively by diffusion bonding copper of heat sink to a flange of glass bead by electrolytic nickel plating or copper plating at the stem in a can-sealed semiconductor device. CONSTITUTION:Glass bead is molten at approx. 1,000 deg.C, thereby bonding a lead 10 to a flange 8. The nickel or copper of electrolytic Ni plating or copper plating film 7 of the flange 8 are mutually diffused and are diffusion bonded at the heating temperature. Thus, the heat sink 9 is rigidly and hermetically secured to the flange 8. Since the plating film is not formed on the surface of the heat sink 9, the electric characteristics of the pellet are not deteriorated or unstabilized since void for increasing the thermal resistance is not, when the pellet is secured, exist. In this embodiment, the heat sink may not be plated, and the manufacturing cost of the stem can be accordingly reduced. |
