| 摘要 |
PURPOSE:To decrease a lasen power in the continuous as oscilltion Nd: YAG lasen beam annealing of a silicon film accumulated on a transparent amorphous dielectric substrate by providing a light reflector made of either Al or Au or Ag, to the reverse of the substrate. CONSTITUTION:A silica glass substrate 2 and a silica glass substrate 4 having an Au evaporation film 3 are placed on a sample table 5 in such a manner that the Au evaporation film faces the reverse of the substrate 2. When, in this condition, a silicon film 1 is annealed through the use of a continuous oscillation Nd: YAG laser, a laser power of approx. 8.5W is required to dissolve the silicon film 1. In case a silicon film-accumulated silica glass substrate is subjected to a conventional direct laser annealing, a laser power of 12W is required to dissolve the silicon film. Thus, reflecting a laser beam by an Au evaporation film can reduce the necessary laser power for annealing by approx. 30% as compared with a conventional annealing method. |
