| 摘要 |
PURPOSE:To improve the bondability and stability of a gate electrode and to reduce the resistance of the electrode by forming the gate electrode of an MOS semiconductor element of silicon-metal-silicon as 3-layer structure. CONSTITUTION:An Si wafer 1 is oxidized, and a gate oxidized film 2 is formed as an insulating film on the surface. Then, a polysilicon 3 is formed as the first layer of the gate electrode on the film 2, and phosphorus 4 is deposited on the silicon 3 as required. Thereafter, metal 5 is deposited as the second layer of the gate electrode and polysilicon 6 sequentially deposited as the third layer on the polysilicon 3, and phosphorus 7 is deposited on the silicon 6 as required. |
