| 摘要 |
PURPOSE:To avoid damage or contamination leaving on the substrate by a method wherein an insulative film within a window of an insulative layer formed on the semiconductor substrate is removed with plasma and then a conductive layer is evaporated through sputtering. CONSTITUTION:With CF4 being mixed Ar of 0.01-0.1torr, a microwave of ca. 300W is generated and introducd into a sputtering chamber 1 through a waveguide 8 and a quartz glass 7, so that plasma 12 is produced in the chamber. With this, a thin SiO2 film within a window of a wafer 5 is removed for ca. 10min. Then, Al is evaporated on the window within the chamber. At this time, Ar is set at 1-5X10<-3> Torr. With such use of the microwave to excite Ar plasma for etching, high exciting efficiency can be attained. Thus, it becomes possible to achieve satisfactorious etching with low power and to remove SiO2 within the window without causing any damage or contamination on the substrate. |
